general purpose transistor array one differentially connected pair and three isolated transistor arrays the mc3346 is designed for general purpose, low power applications for consumer and industrial designs. ? guaranteed baseemitter voltage matching ? operating current range specified: 10 m a to 10 ma ? five general purpose transistors in one package maximum ratings rating symbol value unit collectoremitter voltage v ceo 15 vdc collectorbase voltage v cbo 20 vdc emitterbase voltage v eb 5.0 vdc collectorsubstrate voltage v cio 20 vdc collector current continuous i c 50 madc total power dissipation @ t a = 25 c derate above 25 c p d 1.2 10 w mw/ c operating temperature range t a 40 to +85 c storage temperature range t stg 65 to +150 c pin connections pin 13 is connected to substrate and must remain at the lowest circuit potential. 14 13 12 11 10 9 8 7 6 5 4 3 2 1 q5 q4 q1 q2 q3 on semiconductor ? semiconductor components industries, llc, 2001 may, 2001 rev. 1 1 publication order number: mc3346/d device operating temperature range package mc3346 semiconductor technical data general purpose transistor array ordering information mc3346d mc3356p t a = 40 to +85 c so14 plastic dip d suffix plastic package case 751a (so14) p suffix plastic package case 646 14 1 14 1
mc3346 http://onsemi.com 2 electrical characteristics (t a = +25 c, unless otherwise noted.) characteristics symbol min typ max unit static characteristics collectorbase breakdown voltage (i c = 10 m adc) v (br)cbo 20 60 vdc collectoremitter breakdown voltage (i c = 1.0 madc) v (br)ceo 15 vdc collectorsubstrate breakdown voltage (i c = 10 m a) v (br)cio 20 60 vdc emitterbase breakdown voltage (i e = 10 m adc) v (br)ebo 5.0 7.0 vdc collectorbase cutoff current (v cb = 10 vdc, i e = 0) i cbo 40 nadc dc current gain (i c = 10 madc, v ce = 3.0 vdc) (i c = 1.0 madc, v ce = 3.0 vdc) (i c = 10 m adc, v ce = 3.0 vdc) h fe 40 140 130 60 baseemitter voltage (v ce = 3.0 vdc, i e = 1.0 madc) (v ce = 3.0 vdc, i e = 10 madc) v be 0.72 0.8 vdc input offset current for matched pair q1 and q2 (v ce = 3.0 vdc, i c = 1.0 madc) |i io1 i io2| 0.3 2.0 m adc magnitude of input offset v oltage (v ce = 3.0 vdc, i c = 1.0 madc) 0.5 5.0 mvdc temperature coefficient of baseemitter v oltage (v ce = 3.0 vdc, i c = 1.0 madc) d v be t d 1.9 mv/ c temperature coef ficient ? d v io ? t d 1.0 m v/ c collectoremitter cutoff current (v ce = 10 vdc, i b = 0) i ceo 0.5 m adc dynamic characteristics low frequency noise figure (v ce = 3.0 vdc, i c = 100 m adc, r s = 1.0 k w , f = 1.0 khz) nf 3.25 db forward current transfer ratio (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 khz) h fe 110 short circuit input impedance (v ce = 3.0 vdc, i c = 1.0 madc) h ie 3.5 k w open circuit output impedance (v ce = 3.0 vdc, i c = 1.0 madc) h oe 15.6 m mhos reverse voltage transfer ratio (v ce = 3.0 vdc, i c = 1.0 madc) h re 1.8 x10 4 forward transfer admittance (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 mhz) y fe 31j1.5 input admittance (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 mhz) y ie 0.3 + j0.04 output admittance (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 mhz) y oe 0.001 + j0.03 currentgain bandwidth product (v ce = 3.0 vdc, i c = 3.0 madc) f t 300 550 mhz emitterbase capacitance (v eb = 3.0 vdc, i e = 0) c eb 0.6 pf collectorbase capacitance (v cb = 3.0 vdc, i c = 0) c cb 0.58 pf collectorsubstrate capacitance (v cs = 3.0 vdc, i c = 0) c ci 2.8 pf
mc3346 http://onsemi.com 3 figure 1. collector cutoff current versus temperature (each transistor) figure 2. collector cutoff current versus temperature (each transistor) figure 3. input offset characteristics for q1 and q2 figure 4. baseemitter and input offset voltage characteristics figure 5. dc current gain t a , ambient temperature ( c) ib = 0 v ce = 10 v v ce = 5.0 v 0 25 50 75 100 125 i , collector cutoff current (nadc) cbd t a , ambient temperature ( c) v cb = 15 v v cb = 5.0 v v cb = 10 v 0 25 50 75 100 125 i , collector cutoff current (nadc) cbd i e , emitter current (madc) h fe fe h , dc current gain h /h , dc current gain ra tio fe1 fe2 0.01 0.05 0.1 0.5 1.0 5.0 10 h fe1 h fe2 or h fe2 h fe1 i c , collector current (madc) i , input offset current ( adc) io m 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 0.7 1.0 i e , emitter current (madc) v , baseemitter voltage (v) fe v be v io 0.01 0.05 0.1 0.5 1.0 5.0 10 v , input offset voltage (mvdc) i o 10 2 10 1 1.0 10 -1 10 -2 10 -3 10 3 10 2 10 1 1.0 10 -1 10 -2 140 130 110 90 70 50 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.9 0.8 0.7 0.6 0.5 0.4 3.5 3.0 2.5 2.0 1.5 1.0 0.95 0.9 0.85 0.8 0.75 5.0 4.0 3.0 2.0 1.0 0
mc3346 http://onsemi.com 4 package dimensions p suffix plastic package case 64606 issue m 17 14 8 b a dim min max min max millimeters inches a 0.715 0.770 18.16 18.80 b 0.240 0.260 6.10 6.60 c 0.145 0.185 3.69 4.69 d 0.015 0.021 0.38 0.53 f 0.040 0.070 1.02 1.78 g 0.100 bsc 2.54 bsc h 0.052 0.095 1.32 2.41 j 0.008 0.015 0.20 0.38 k 0.115 0.135 2.92 3.43 l m --- 10 --- 10 n 0.015 0.039 0.38 1.01 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension l to center of leads when formed parallel. 4. dimension b does not include mold flash. 5. rounded corners optional. f hg d k c seating plane n t 14 pl m 0.13 (0.005) l m j 0.290 0.310 7.37 7.87
mc3346 http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimensions a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. a b g p 7 pl 14 8 7 1 m 0.25 (0.010) b m s b m 0.25 (0.010) a s t t f r x 45 seating plane d 14 pl k c j m dim min max min max inches millimeters a 8.55 8.75 0.337 0.344 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27 bsc 0.050 bsc j 0.19 0.25 0.008 0.009 k 0.10 0.25 0.004 0.009 m 0 7 0 7 p 5.80 6.20 0.228 0.244 r 0.25 0.50 0.010 0.019 d suffix plastic package case 751a03 (so8) issue f
mc3346 http://onsemi.com 6 notes
mc3346 http://onsemi.com 7 notes
mc3346 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mc3346/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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